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SKW20N60HS ^ power semiconductors 1 rev 2 aug-02 high speed igbt in npt-technology ? 30% lower e off compared to previous generation ? short circuit withstand time ? 10 s ? designed for operation above 30 khz ? npt-technology for 600v applications offers: - parallel switching capability - moderate e off increase with temperature - very tight parameter distribution ? high ruggedness, temperature stable behaviour ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c e off t j package ordering code SKW20N60HS 600v 20 240j 150 c to-247ac q67040-s4502 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 36 20 pulsed collector current, t p limited by t jmax i cpuls 80 turn off safe operating area v ce 600v, t j 150 c - 80 diode forward current t c = 25 c t c = 100 c i f 40 20 diode pulsed current, t p limited by t jmax i fpuls 80 a gate-emitter voltage static transient ( t p <1s, d <0.05) v ge 20 30 v short circuit withstand time 1) v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 178 w operating junction and storage temperature t j , t stg -55...+150 time limited operating junction temperature for t < 150h t j(tl) 175 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1) allowed number of short circuits: <1000; time between short circuits: >1s. p-to-247-3-1 (to-247ac) g c e
SKW20N60HS ^ power semiconductors 2 rev 2 aug-02 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.7 diode thermal resistance, junction ? case r thjcd 1.7 thermal resistance, junction ? ambient r thja to-247ac 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =20a t j =25 c t j =150 c 2.8 3.5 3.15 4.00 diode forward voltage v f v ge =0v, i f =20a t j =25 c t j =150 c - 1.5 1.5 2.0 2.0 gate-emitter threshold voltage v ge(th) i c =500 a, v ce = v ge 345 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 40 2500 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =20a -14 s
SKW20N60HS ^ power semiconductors 3 rev 2 aug-02 dynamic characteristic input capacitance c iss - 1100 output capacitance c oss - 150 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz -64 pf gate charge q gate v cc =480v, i c =20a v ge =15v - 100 nc internal emitter inductance measured 5mm (0.197 in.) from case l e to-247ac - 13 nh short circuit collector current 1) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 170 a switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -18 rise time t r -15 turn-off delay time t d(off) - 207 fall time t f -13 ns turn-on energy e on -0.39 turn-off energy e off -0.30 total switching energy e ts t j =25 c, v cc =400v, i c =20a, v ge =0/15v, r g =16 ? l 2) =60nh, c 2) =40pf energy losses include ?tail? and diode reverse recovery. -0.69 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 130 15 115 ns diode reverse recovery charge q rr - 730 nc diode peak reverse recovery current i rrm -16 a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =400v, i f =20a, di f /dt =1100a/ s - 540 a/ s 1) allowed number of short circuits: <1000; time between short circuits: >1s. 2) leakage inductance l and stray capacity c due to test circuit in figure e.
SKW20N60HS ^ power semiconductors 4 rev 2 aug-02 switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -15 rise time t r -8.5 turn-off delay time t d(off) -65 fall time t f -35 ns turn-on energy e on -0.46 turn-off energy e off -0.24 total switching energy e ts t j =150 c v cc =400v, i c =20a, v ge =0/15v, r g = 2.2 ? l 1) =60nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. -0.7 mj turn-on delay time t d(on) -17 rise time t r -13 turn-off delay time t d(off) - 222 fall time t f -13 ns turn-on energy e on -0.6 turn-off energy e off -0.36 total switching energy e ts t j =150 c v cc =400v, i c =20a, v ge =0/15v, r g = 16 ? l 1) =60nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. -0.96 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 200 25 175 ns diode reverse recovery charge q rr - 1500 nc diode peak reverse recovery current i rrm -21 a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =150 c v r =400v, i f =20a, di f /dt =1250a/ s - 410 a/ s 1) leakage inductance l and stray capacity c due to test circuit in figure e.
SKW20N60HS ^ power semiconductors 5 rev 2 aug-02 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 2 0a 3 0a 4 0a 5 0a 6 0a 7 0a 8 0a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10a 100a t p =4s 15s 200s 1ms 50s dc f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 16 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 0w 20w 40w 60w 80w 100w 120w 140w 160w 180w i c , collector current 25c 75c 125c 0a 10a 20a 30a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
SKW20N60HS ^ power semiconductors 6 rev 2 aug-02 i c , collector current 0v 2v 4v 6v 0a 10a 20a 30a 4 0a 50a 5v 7v 9v 11v 13v 15v v ge =20v i c , collector current 0v 2v 4v 6v 0a 10a 20a 30a 40a 50a 5v 7v 9v 11v 13v 15v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 150c) i c , collector current 0v 2v 4v 6v 8v 0a 20a 40a 150c 25c t j =-55c v ce(sat), collector - emitt saturation voltage -50c 0c 50c 100c 150c 1,0v 1,5v 2,0v 2,5v 3,0v 3,5v 4,0v 4,5v 5,0v 5,5v i c =40a i c =20a i c =10a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
SKW20N60HS ^ power semiconductors 7 rev 2 aug-02 t, switching times 0a 10a 20a 30a 1ns 10ns 100ns t r t d(on) t f t d(off) t, switching times 0? 10? 20? 30? 40? 1 ns 10 ns 100 ns t f t r t d(off) t d(on) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =150c, v ce =400v, v ge =0/15v, r g =16 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j =150c, v ce =400v, v ge =0/15v, i c =20a, dynamic test circuit in figure e) t, switching times 0c 50c 100c 150c 10ns 100ns t f t r t d(on) t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 1,5v 2,0v 2,5v 3,0v 3,5v 4,0v 4,5v 5,0v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce =400v, v ge =0/15v, i c =20a, r g =16 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.5ma)
SKW20N60HS ^ power semiconductors 8 rev 2 aug-02 e , switching energy losses 0a 10a 20a 30a 40a 0,0mj 1,0mj 2,0mj e ts * e off *) e on include losses due to diode recovery e on * e , switching energy losses 0? 10? 20? 30? 40? 0,0 mj 0,5 mj 1,0 mj e ts * e on * *) eon include losses due to diode recovery e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j =150c, v ce =400v, v ge =0/15v, r g =16 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j =150c, v ce =400v, v ge =0/15v, i c =20a, dynamic test circuit in figure e) e , switching energy losses 0c 50c 100c 150c 0 ,00mj 0 ,25mj 0 ,50mj 0 ,75mj e ts * e on * *) e on include losses due to diode recovery e off z thjc , transient thermal resistance 1s 10s 100s 1ms 10ms 100ms 10 -4 k/w 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce =400v, v ge =0/15v, i c =20a, r g =16 ? , dynamic test circuit in figure e) figure 16. igbt transient thermal resistance ( d = t p / t ) c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.1882 0.1137 0.3214 2.24*10 -2 0.1512 7.86*10 -4 0.0392 9.41*10 -5
SKW20N60HS ^ power semiconductors 9 rev 2 aug-02 v ge , gate - emitter voltage 0nc 50nc 100nc 0v 5v 10v 15v 480v 120v c, capacitance 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =20 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 0s 5s 10s 15s i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 0a 50a 100a 150a 200a 250a v ge , gate - emitetr voltage v ge , gate - emitetr voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c ) figure 20. typical short circuit collector current as a function of gate- emitter voltage ( v ce 600v, t j 150 c)
SKW20N60HS ^ power semiconductors 10 rev 2 aug-02 t rr , reverse recovery time 200a/s 400a/s 600a/s 800a/s 100ns 200ns 300ns 400ns i f =40a i f =20a i f =10a q rr , reverse recovery charge 200a/s 400a/s 600a/s 800a/s 0,0c 0,5c 1,0c 1,5c 2,0c i f =40a i f =20a i f =10a di f /dt , diode current slope di f /dt , diode current slope figure 21. typical reverse recovery time as a function of diode current slope ( v r =400v, t j =150c, dynamic test circuit in figure e) figure 22. typical reverse recovery charge as a function of diode current slope ( v r =400v, t j =150c, dynamic test circuit in figure e) i rr , reverse recovery current 200a/s 400a/s 600a/s 800a/s 0a 5a 1 0a 1 5a 2 0a 2 5a i f =40a i f =20a i f =10a d i rr /dt , diode peak rate of fall of reverse recovery current 200a/s 400a/s 600a/s 800a/s -0a/s -100a/s -200a/s -300a/s -400a/s di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery current as a function of diode current slope ( v r =400v, t j =150c, dynamic test circuit in figure e) figure 24. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, t j =150c, dynamic test circuit in figure e)
SKW20N60HS ^ power semiconductors 11 rev 2 aug-02 i f , forward current 0,0v 0,5v 1,0v 1,5v 0a 10a 2 0a 3 0a 150c 25c t j =-55c v f , forward voltage -50c 0c 50c 100c 150c 1,2v 1,4v 1,6v 1,8v 2,0v i f =40a i f =20a i f =10a v f , forward voltage t j , junction temperature figure 25. typical diode forward current as a function of forward voltage figure 26. typical diode forward voltage as a function of junction temperature z thjc , transient thermal resistance 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width figure 27. diode transient thermal impedance as a function of pulse width ( d = t p / t ) c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) = 0.311 7.83*10 -2 0.271 1.21*10 -2 0.221 1.36*10 -3 0.584 1.53*10 -4 0.314 2.50*10 -5
SKW20N60HS ^ power semiconductors 12 rev 2 aug-02 dimensions symbol [mm] [inch] min max min max a 4.78 5.28 0.1882 0.2079 b 2.29 2.51 0.0902 0.0988 c 1.78 2.29 0.0701 0.0902 d 1.09 1.32 0.0429 0.0520 e 1.73 2.06 0.0681 0.0811 f 2.67 3.18 0.1051 0.1252 g 0.76 max 0.0299 max h 20.80 21.16 0.8189 0.8331 k 15.65 16.15 0.6161 0.6358 l 5.21 5.72 0.2051 0.2252 m 19.81 20.68 0.7799 0.8142 n 3.560 4.930 0.1402 0.1941 ? p 3.61 0.1421 q 6.12 6.22 0.2409 0.2449 to-247ac
SKW20N60HS ^ power semiconductors 13 rev 2 aug-02 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =60nh a n d stray capacity c =40pf.
SKW20N60HS ^ power semiconductors 14 rev 2 aug-02 published by infineon technologies ag , bereich kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2001 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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